2SB1424G-X-AB3-R datasheet(2/3 Pages) UTC

2 / 3 page

2SB1424

PNP SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R208-044.B



ABSOLUTE MAXIMUM RATING ( TA=25C, unless otherwise specified )

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

-20

Collector-Emitter Voltage

VCEO

-20

Emitter-Base Voltage

VEBO

-6

Collector Current

-3

Pulse(Note 2)

-5

Collector Dissipation

0.5

Junction Temperature

150

℃

Storage Temperature

TSTG

-55 ~ +150

℃

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Note: 1 .Absolute maximum ratings are stress ratings only and functional device operation is not implied.

Note: 2. Pulse test: Pulse Width=10ms



ELECTRICAL CHARACTERISTICS ( TA=25C, unless otherwise specified )

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

Collector-Base Breakdown Voltage

BVCBO

IC=-50μA , IE=0

-20

Collector-Emitter Breakdown Voltage

BVCEO

IC=-1mA , IB=0

-20

Emitter-Base Breakdown Voltage

BVEBO

IE=-50μA, IC=0

-6

Collector Cutoff Current

ICBO

VCB=-20V

-0.1

μA

Emitter Cutoff Current

IEBO

VEB=-5V

-0.1

μA

ON CHARACTERISTICS

DC Current Gain

hFE

VCE=-2V, IC=-0.1A

120

390

Collector-Emitter Saturation Voltage

VCE(SAT)

IC/IB =(-2A)/(-0.1A)

-0.5

SMALL-SIGNAL CHARACTERISTICS

Current Gain Bandwidth Product

VCE=-2V, IE=0.5A, f=100MHz

240

MHz

Output Capacitance

Cob

VCB=-10V, IE=0, f=1MHz



CLASSIFICATION OF hFE1

RANK

RANGE

120-270

180-390

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