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HE8550G-X-AE3-R Datasheet(PDF) 3 Page - Unisonic Technologies |
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HE8550G-X-AE3-R Datasheet(HTML) 3 Page - Unisonic Technologies |
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3 / 4 page ![]() HE8550 PNP SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 3 of 4 www.unisonic.com.tw QW-R206-031.H TYPICAL CHARACTERISTICS Static Characteristics Collector-Emitter Voltage ( V) -0 -0.4 -0.8 -1.2 -1.6 -2.0 0 -0.1 -0.2 -0.3 -0.4 -0.5 IB=-0.5mA IB=-1.0mA IB=-1.5mA IB=-2.0mA IB=-2.5mA IB=-3.0mA DC Current Gain Collector Current, IC (mA) VCE=-1V -10-1 -100 -101 -102 -103 100 101 102 103 Base-Emitter on Voltage Base-Emitter Voltage (V) 0 -0.2 -0.4 -0.6 -0.8 -1.0 VCE=-1V Collector Current, IC (mA) Saturation Voltage VCE(SAT) VBE(SAT) IC=10*IB -100 -101 -102 -103 -10-1 -100 -101 -102 -103 -101 -102 -103 -104 Current Gain-Bandwidth Product Collector Output Capacitance Collector Current, IC (mA) VCE=-10V Collector-Base Voltage (V) f=1MHz IE=0 -100 -101 -102 -103 100 101 102 103 -100 -101 -102 -103 100 101 102 103 |
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