MIC94030/94031

Micrel

6-42

1997

Symbol

Parameter

Condition (Note 1)

Min

Typ

Max

Units

V

BDSS

Drain-Source Breakdown Voltage

V

13.5

V

V

GS

Gate Threshold Voltage

V

0.6

1.0

1.4

V

I

GSS

Gate-Body Leakage

V

1

µA

R

GS

Gate-Source Resistor

V

500

750

1000

k

Ω

C

ISS

Input Capacitance

V

100

pF

I

DSS

Zero Gate Voltage Drain Current

V

25

µA

V

0.010

250

µA

I

D(ON)

On-State Drain Current

V

6.3

A

R

DS(ON)

Drain-Source On-State Resist.

V

0.45

Ω

V

0.75

1.00

Ω

V

1.20

Ω

g

FS

Forward Transconductance

V

480

mS

Note 1

T

Note 2

ESD gate protection diode conducts during positive gate-to-source voltage excursions.

Note 3

MIC94030 only

Note 4

MIC94031 only

Note 5

Pulse Test: Pulse Width

≤ 80µsec, Duty Cycle ≤ 0.5%

Absolute Maximum Ratings

Voltage and current values are negative. Signs not shown for clarity.

Drain-to-Source Voltage (pulse) .................................... 16V

Gate-to-Source Voltage (pulse) .................................... 16V

Continuous Drain Current

T

T

Operating Junction Temperature ............... –55

°C to +150°

Storage Temperature ............................... –55

°C to +150°C

Total Power Dissipation

T

T

Thermal Resistance

θ

θ

Lead Temperature

1/16

" from case, 10s ........................................... +300

°C