TIP112G-TN3-R datasheet(2/4 Pages) UTC

2 / 4 page

TIP112

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R203-022.D

ABSOLUTE MAXIMUM RATING (TC =25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector to Base Voltage

VCBO

100

Collector to Emitter Voltage

VCEO

100

Emitter to Base Voltage

VEBO

Collector Current

Peak

ICM

Base Current (DC)

Collector Dissipation

TO-126

TO-220

TO-252

Junction Temperature

150

°C

Storage Temperature

TSTG

-65~+150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Collector-Emitter Breakdown Voltage

VCEO(SUS) IC=30mA, IB=0A

100

Collector-Emitter Saturation Voltage

VCE(SAT) IC=2A, IB=8mA

2.5

Base-Emitter Turn-On Voltage

VBE(ON)

VCE=4V, IC=2A

2.8

Collector-Base Cut-Off Current

ICBO

VCB=100V, IE=0A

Collector-Emitter Cut-Off Current

ICEO

VCE=50V, VB=0A

Emitter-Base Cut-Off Current

IEBO

VEB=5V, IC=0A

DC Current Gain

hFE

VCE=4V, IC=1A

1000

VCE=4V, IC=2A

500

Collector Capacitance

COB

VCB=10V, IE=0A, f=0.1MHz

100

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