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UT3416G-AE2-R Datasheet(PDF) 1 Page - Unisonic Technologies |
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UT3416G-AE2-R Datasheet(HTML) 1 Page - Unisonic Technologies |
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1 / 3 page ![]() UNISONIC TECHNOLOGIES CO., LTD UT3416 Power MOSFET www.unisonic.com.tw 1 of 3 Copyright © 2014 Unisonic Technologies Co., Ltd QW-R502-325.E N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTC UT3416 is advanced n-channel enhancement MOSFET which can provide the designer with the best combination of excellent RDS (ON), low gate charge and low gate voltages as low as 1.8V.When it is used as a load switch or in PWM application, the UTC UT3416 can be considered as an ideal. FEATURES * VDS =20 V * ID =6.5 A * RDS(ON)<22 mΩ @ VGS=4.5V, ID =6.5A SYMBOL ORDERING INFORMATION Ordering Number Package Pin Assignment Packing 1 2 3 UT3416G-AE2-R SOT-23-3 S G D Tape Reel UT3416G-AE3-R SOT-23 S G D Tape Reel MARKING 34SG |
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