PESDXS1UB datasheet(5/15 Pages) PHILIPS

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PESDXS1UB_SERIES_2

Product data sheet

Rev. 02 — 24 August 2009

5 of 15

NXP Semiconductors

PESDxS1UB series

ESD protection diodes in SOD523 package

Characteristics

Table 8.

Characteristics

Tamb = 25 °C unless otherwise speciﬁed

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VRWM

reverse standoff voltage

PESD3V3S1UB

3.3

PESD5V0S1UB

PESD12VS1UB

PESD15VS1UB

PESD24VS1UB

IRM

reverse leakage current

see Figure 7

PESD3V3S1UB

VRWM = 3.3 V

0.7

µA

PESD5V0S1UB

VRWM = 5 V

0.1

µA

PESD12VS1UB

VRWM = 12 V

< 1

PESD15VS1UB

VRWM = 15 V

< 1

PESD24VS1UB

VRWM = 24 V

< 1

VBR

breakdown voltage

IR = 5 mA

PESD3V3S1UB

5.2

5.6

6.0

PESD5V0S1UB

6.4

6.8

7.2

PESD12VS1UB

14.7

15.0

15.3

PESD15VS1UB

17.6

18.0

18.4

PESD24VS1UB

26.5

27.0

27.5

diode capacitance

VR = 0 V; f = 1 MHz;

see Figure 5 and 6

PESD3V3S1UB

207

300

PESD5V0S1UB

152

200

PESD12VS1UB

PESD15VS1UB

PESD24VS1UB

V(CL)R

clamping voltage

[1]

PESD3V3S1UB

IPP = 1 A

IPP = 18 A

PESD5V0S1UB

IPP = 1 A

IPP = 15 A

PESD12VS1UB

IPP = 1 A

IPP = 5A

PESD15VS1UB

IPP = 1 A

IPP = 5 A

PESD24VS1UB

IPP = 1 A

IPP = 3 A

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