2

600VCoolMOS™CEPowerTransistor

IPD60R800CE,IPA60R800CE

Rev.2.0,2014-09-25

Final Data Sheet

tab

1

2

3

DPAK

TO-220FP

Drain

Pin 2, Tab

Gate

Pin 1

Source

Pin 3

1Description

CoolMOS™isarevolutionarytechnologyforhighvoltagepower

MOSFETs,designedaccordingtothesuperjunction(SJ)principleand

pioneeredbyInfineonTechnologies.CoolMOS™CEisa

price-performanceoptimizedplatformenablingtotargetcostsensitive

applicationsinConsumerandLightingmarketsbystillmeetinghighest

efficiencystandards.Thenewseriesprovidesallbenefitsofafast

switchingSuperjunctionMOSFETwhilenotsacrificingeaseofuseand

offeringthebestcostdownperformanceratioavailableonthemarket.

Features

•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss

•Veryhighcommutationruggedness

•Easytouse/drive

•Pb-freeplating,Halogenfreemoldcompound

•Qualifiedforconsumergradeapplications

Applications

PFCstages,hardswitchingPWMstagesandresonantswitchingstages

fore.g.PCSilverbox,Adapter,LCD&PDPTVandLighting.

Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate

orseparatetotempolesisgenerallyrecommended.

Table1KeyPerformanceParameters

Parameter

Value

Unit

650

V

800

m

Ω

17.2

nC

15.7

A

1.6

µJ

Body diode di/dt

500

A/µs

Type/OrderingCode

Package

Marking

RelatedLinks

IPD60R800CE

PG-TO 252

IPA60R800CE

PG-TO 220 FullPAK

6R800CE

see Appendix A