1N40AG-AA3-R datasheet(3/5 Pages) UTC

3 / 5 page

1N40A

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 5

www.unisonic.com.tw

QW-R205-029.b



ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

400

Gate-Source Voltage

VGSS

±30

Continuous (TC=25°C)

Drain Current

Pulsed (Note 2)

IDM

Avalanche Energy

Single Pulsed (Note 3)

EAS

Peak Diode Recovery dv/dt (Note 4)

dv/dt

4.5

V/ns

SOT-223

Power Dissipation

TO-251

SOT-223

125

W/°C

Derate above 25°C

TO-251

0.2

W/°C

Junction Temperature

+150

°C

Storage Temperature

TSTG

-55~+150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating: Pulse width limited by maximum junction temperature

3. L = 80mH, IAS = 1A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C

4. ISD ≤ 1.8A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

SOT-223

150

°C/W

Junction to Ambient

TO-251

θJA

110

°C/W

SOT-223

125

°C/W

Junction to Case

TO-251

θJC

°C/W

1N40AG-AA3-R Datasheet(PDF) 3 Page - Unisonic Technologies

1N40AG-AA3-R Datasheet(HTML) 3 Page - Unisonic Technologies

Html Pages

1 2 3 4 5

Datasheet Download

Link URL