UT4114

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R502-A78.b



PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

20

V

Gate-Source Voltage

±16

V

Drain Current t

Continuous

20

A

18.2

Pulsed

50

A

Continuous Source - Drain Diode

Current

5.1

A

Single Pulsed Avalanche Current

L = 0.1mH

30

A

Single Pulsed Avalanche Energy

45

mJ

Power Dissipation

5.7

W

Junction Temperature

-55 ~ 150

°C

Storage Temperature

-55 ~ 150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

3. Maximum under steadg state conditions is 85 °C/W.

4. Package limited.



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient (Note)

t ≤10 s

50

°C/W

Note: Surface Mounted on 1×1 FR4 board.



PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

20

V

△

19

mV/°C

Drain-Source Leakage Current

1

µA

10

Gate- Source Leakage Current

Forward

+100

nA

Reverse

-100

nA

ON CHARACTERISTICS

Gate Threshold Voltage

1.0

2.1

V

△

-5.3

mV/°C

Static Drain-Source On-State Resistance

(Note 1)

4.9

6

mΩ

5.6

7

mΩ

Forward Transconductance (Note 1)

55

S

On State Drain Current (Note 1)

30

A

DYNAMIC PARAMETERS

(Note 2)

Input Capacitance

f=1.0MHz

3700

pF

Output Capacitance

745

pF

Reverse Transfer Capacitance

315

pF