IPA50R650CE_15 datasheet(4/14 Pages) INFINEON

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500VCoolMOS™CEPowerTransistor

IPA50R650CE

Rev.2.1,2014-06-12

Final Data Sheet

2Maximumratings

atTj=25°C,unlessotherwisespecified

Table2Maximumratings

Values

Min.

Typ.

Max.

Parameter

Symbol

Unit Note/TestCondition

Continuous drain current

6.1

4.6

2.9

TC = 25°C; TO-220

TC = 25°C; TO-220 FullPAK

TC = 100°C; TO-220 FullPAK

Pulsed drain current

ID,pulse

TC=25°C

Avalanche energy, single pulse

EAS

102

ID =2.3A; VDD = 50V

Avalanche energy, repetitive

EAR

0.15

ID =2.3A; VDD = 50V

Avalanche current, repetitive

IAR

2.3

MOSFET dv/dt ruggedness

dv/dt

V/ns

VDS=0...400V

Gate source voltage

VGS

-20

-30

static;

AC (f>1 Hz)

Power disspiation

Ptot

27.2

TC=25°C

Operating and storage temperature

Tj,Tstg

-40

150

°C

Mounting torque

Ncm

M2.5 screws

Continuous diode forward current

4.0

TC=25°C

Diode pulse current

IS,pulse

19.0

TC = 25°C

Reverse diode dv/dt

dv/dt

V/ns

VDS=0...400V,ISD<=IS,Tj=25°C

Maximum diode commutation speed

dif/dt

500

µs VDS=0...400V,ISD<=IS,Tj=25°C

Insulation withstand voltage for TO-220

FullPAK

VISO

2500

Vrms,TC=25°C,t=1min

3Thermalcharacteristics

Table3Thermalcharacteristics

Values

Min.

Typ.

Max.

Parameter

Symbol

Unit Note/TestCondition

Thermal resistance, junction - case

RthJC

4.6

°C/W -

Thermal resistance, junction - ambient

RthJA

°C/W leaded

Soldering temperature, wavesoldering

only allowed at leads

Tsold

260

°C

1.6mm (0.063 in.) from case for 10s

1) Limited by Tj max. Maximum duty cycle D=0.75

2) Pulse width tp limited by Tj,max

3)VDClink=400V;VDS,peak<V(BR)DSS;identicallowsideandhighsideswitchwithidenticalRG

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