UTT8P03G-K08-3020-R datasheet(2/8 Pages) UTC

2 / 8 page

UTT8P03-H

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 8

www.unisonic.com.tw

QW-R210-006.A



ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise noted)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

-30

Gate-Source Voltage

VGSS

±20

Drain Current

Continuous

TC=25°C

-8

TC=70°C

-6

Pulsed (Note 3)

IDM

-60

Power Dissipation (Note2)

Junction Temperature

-55~+150

°C

Storage Temperature Range

TSTG

-55~+150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. The power dissipation PD is based on TJ(MAX)=150°C, using ≤10s junction-to-ambient thermal resistance.

3. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low

frequency and duty cycles to keep initial TJ=25°C



THERMAL CHARACTERISTICS

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

θJA

°C/W

Junction to Case

θJC

°C/W

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