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ML4902CT Datasheet(PDF) 9 Page - Micro Linear Corporation |
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ML4902CT Datasheet(HTML) 9 Page - Micro Linear Corporation |
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9 / 12 page ![]() ML4902 9 DESIGN CONSIDERATIONS (Continued) The power handling requirement for RSENSE is given by: PI V V R DOUT MAX OUT IN SENSE =× − F HG I KJ × L N MM O Q PP () 2 1 (5) For example, for a 14A output, RSENSE should be: R mV A mm SENSE = − × =≅ || . . 87 105 14 592 6 ΩΩ The maximum dissipation in RSENSE for a 5.0V input occurs at 1.80V out, where PDISS is ≅ 0.94W. RSENSE must be a low inductance part, such as Dale/ Vishay’s type WSL-2512 series (WSL–2512–.006±1%). Using a PCB trace as a current sense element is not recommended due to the high temperature coefficient of copper, and due to etching and plating tolerances which can occur from board to board. If a current sense resistor is not employed for overcurrent protection, the voltage drop across (Q3||Q4)’s channel during its conducting interval (the synchronous rectification interval) is used to monitor the inductor current. Ignoring the AC component of the current in the buck inductor, the voltage across (Q3||Q4) will be: VI R SENSE QQ DS ON QQ =´ 34 3 4 || || bg afbg (6) RDS(ON) is typically specified at a MOSFET junction temperature (Tj) of 25ºC, but its value at other junction temperatures can either be found graphically in the MOSFET data sheet, or can be estimated by: RR T C DS ON T DS ON C ()( ) ()( º ) .º 225 1007 2 25 =´ ´ - af (7) With a nominal threshold of -97mV for the ISENSE comparator, the current limit threshold is then: I mV R LIMIT DS ON T = −97 2 ()( ) (8) For Pentium Pro and Pentium II applications, the continuous current may be as high as 14A, so the current limit threshold should be set for a minimum value of 16A at the (Q3||Q4)’s highest anticipated Tj. If necessary, the voltage across the channel of (Q3||Q4) may be divided using two moderately-valued resistors (use R5 = 100 Ω) and presented after that division to the ML4902. The R and C values connected to the PROTECT pin for setting the current limit delay and the off-time of the hiccup mode are 1M Ω and 220nF, respectively. These values will protect the external power components and the power source from overheating during an overcurrent condition. If it is necessary to change the ratio of on and off times during overcurrent conditions, this can be done by selecting a different value for C12. Larger values of C12 will increase the delay between retry attempts (the length of the “hiccup”), and smaller values will reduce the delay. HIGHER CURRENT LEVELS Next generation processor chips will require currents of up to 20A. Additionally, it is often desirable in larger systems to distribute all power from one 5V buss, regulating it down to other voltages as needed at the points of use. These applications are readily met by the ML4902. For instance, the circuit shown in Figure 1 will deliver an output current of 20A with only three changes: • As IOUT increases, the ripple current through the input capacitor bank will also increase. Add at least one 1500µF, 6.3V input capacitor in parallel with the three shown (C1 - C3). • Synchronous rectifier transistors Q3 and Q4 will see a significantly greater RMS drain current at 20A output than at 14A. Therefore, the use of lower RDS(ON) parts such as Siliconix’ Si4420DY is required. • The value of R1 may require adjustment, depending upon factors such as the specific MOSFET type chosen for Q3 and Q4, and the required operating ambient temperature. In dealing with circuits handling greater than 50W, it is always important to pay attention to thermal issues. When the circuit of Figure 1 is modified for >20A applicatons, a key consideration is that it be provided with adequate heatsinking. Ideally, the system should provide 100 linear feet per minute (LFM) of airflow as specified in Intel’s standards relating to VRMs. Micro Linear does not recommend using the sense resistor method of overcurrent protection at high output current levels, as this does not provide the inherent thermal foldback of IOUT(MAX) which is obtained by directly sensing the VDS(ON) of the rectifier MOSFETs. |
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