4 Meg x 4 EDO DRAM

Micron Technology, Inc., reserves the right to change products or specifications without notice.

D47.pm5 – Rev. 3/97

©1997, Micron Technology, Inc.

9

4 MEG x 4

EDO DRAM

TECHNOLOGY, INC.

AC ELECTRICAL CHARACTERISTICS

AC CHARACTERISTICS

-5

-6

PARAMETER

SYMBOL

MIN

MAX

MIN

MAX

UNITS

NOTES

OE# setup prior to RAS# during

0

0

ns

HIDDEN REFRESH cycle

EDO-PAGE-MODE READ or WRITE cycle time

20

25

ns

EDO-PAGE-MODE READ-WRITE cycle time

47

56

ns

Access time from RAS#

50

60

ns

19

RAS# to column address delay time

9

12

ns

21

Row address hold time

9

10

ns

RAS# pulse width

50

10,000

60

10,000

ns

RAS# pulse width (EDO PAGE MODE)

50

125,000

60

125,000

ns

RAS# pulse width during Self Refresh

100

100

µs

Random READ or WRITE cycle time

84

104

ns

RAS# to CAS# delay time

11

14

ns

22

Read command hold time (referenced to CAS#)

0

0

ns

23

Read command setup time

0

0

ns

Refresh period (2,048 cycles)

32

32

ms

Refresh period (4,096 cycles)

64

64

ms

Refresh period S version

128

128

ms

RAS# precharge time

30

40

ns

RAS# to CAS# precharge time

5

5

ns

RAS# precharge time exiting Self Refresh

90

105

ns

Read command hold time (referenced to RAS#)

0

0

ns

23

RAS# hold time

13

15

ns

READ WRITE cycle time

116

140

ns

RAS# to WE# delay time

67

79

ns

13

Write command to RAS# lead time

13

15

ns

Transition time (rise or fall)

50

2

50

ns

Write command hold time

8

10

ns

Write command hold time (referenced to RAS#)

38

45

ns

WE# command setup time

0

0

ns

13

Output disable delay from WE#

0

12

0

15

ns

Write command pulse width

5

5

ns

WE# pulse to disable at CAS# HIGH

10

10

ns

WE# hold time (CBR Refresh)

8

10

ns

WE# setup time (CBR Refresh)

8

10

ns