1N6815

(MSASC25H45K)

1N6815R

(MSASC25H45KR)

45 Volts

25 Amps

Features

• Tungsten/Platinum schottky barrier for very low VF

• Oxide passivated structure for very low leakage currents

• Guard ring protection for increased reverse energy capability

• Epitaxial structure minimizes forward voltage drop

• Hermetically sealed, low profile ceramic surface mount power package

• Low package inductance

•

Very low thermal resistance

•

Available as standard polarity (strap is anode: 1N6815) and reverse

polarity (strap is cathode: 1N6815R)

•

TXV-level (MSASC25H45KV) or S-level (MSASC25H45KS) screening

i.a.w. Microsemi Internal Procedure PS11.50 available

DESCRIPTION

SYMBOL

MAX.

UNIT

Peak Repetitive Reverse Voltage

45

Volts

Working Peak Reverse Voltage

45

Volts

DC Blocking Voltage

45

Volts

Average Rectified Forward Current, Tc

≤ 145°C

25

Amps

derating, forward current, Tc

≥ 145°C

(3.3)

Amps/

°C

Nonrepetitive Peak Surge Current, tp= 8.3 ms, half-sinewave

125

Amps

Peak Repetitive Reverse Surge Current, tp= 1

µs, f= 1kHz

2

Amp

Junction Temperature Range

-55 to +150

°C

Storage Temperature Range

-55 to +150

°C

Thermal Resistance, Junction to Case:

1N6815

1N6815R

1.25

1.35

°C/W

Maximum Ratings @ 25

°°°°C (unless otherwise specified)

Mechanical Outline

ThinKey™2

Datasheet# MSC1458A August, 2000

2830 S. Fairview St.

Santa Ana, CA 92704

PH: (714) 979-8220

FAX: (714) 966-5256

LOW VOLTAGE

DROP SCHOTTKY

DIODE