1N6817

1N6817R

100 Volts

25 Amps

Features

• Tungsten schottky barrier

• Oxide passivated structure

• Guard ring protection for increased reverse energy capability

• Epitaxial structure minimizes forward voltage drop

• Hermetically sealed, low profile ceramic surface mount power package

• Low package inductance

•

Very low thermal resistance

•

Available as standard polarity (strap is anode: 1N6817) and reverse

polarity (strap is cathode: 1N6817R)

•

TXV-level screening (MSASC25W100KV) or S-level (MSASC25W100KS)

screening i.a.w. Microsemi internal procedure PS11.50 available

DESCRIPTION

SYMBOL

MAX.

UNIT

Peak Repetitive Reverse Voltage

100

Volts

Working Peak Reverse Voltage

100

Volts

DC Blocking Voltage

100

Volts

Average Rectified Forward Current, T

c

≤ 145°C

25

Amps

derating, forward current, T

c

≥ 145°C

(3.3)

Amps/

°C

Nonrepetitive Peak Surge Current, t

120

Amps

Peak Repetitive Reverse Surge Current, t

µs, f= 1kHz

2

Amp

Junction Temperature Range

-55 to +175

°C

Storage Temperature Range

-55 to +175

°C

Thermal Resistance, Junction to Case:

1N6817

1N6817R

1.25

1.35

°C/W

Maximum Ratings @ 25

°°°°C (unless otherwise specified)

Mechanical Outline

ThinKey™2

Datasheet# MSC1034

B August, 2000

2830 S. Fairview St.

Santa Ana, CA 92704

PH: (714) 979-8220

FAX: (714) 966-5256

LOW REVERSE

LEAKAGE

SCHOTTKY DIODE