2N1893 datasheet(2/2 Pages) MICROSEMI

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CHARACTERISTICS

SYMBOL

MIN.

TYP.

MAX.

UNIT

Off Characteristics

Collector-Emitter Breakdown Voltage (I C = 100 mAdc, RBE = 10 ohms)(1)

BVCER

100

Vdc

Collector-Emitter Sustaining Voltage(1) (I C = 30 mAdc, IB = 0)(1)

BVCEO

Vdc

Collector-Base Breakdown Voltage (I C = 100 µAdc, IE = 0)

BV(BR)CBO

120

Vdc

Emitter-Base Breakdown Voltage (IE = 100

µAdc, I

C = 0)

BV(BR)EBO

7.0

Vdc

Collector Cutoff Current (V CB = 90 Vdc, IE = 0)

(V CB = 90 Vdc, IE = 0, TA = 150

ICBO

0.01

µAdc

Emitter Cutoff Current (V EB = 5.0 Vdc, IC = 0)

IEBO

0.01

µAdc

On Characteristics

D.C. Current Gain (I C = 0.1 mAdc, VCE = 10 Vdc)

(I C = 10mAdc, VCE = 10 Vdc)(1)

(I C = 10mAdc, VCE = 10 Vdc, TA = -55

C)(1)

(I C = 150mAdc, VCE = 10 Vdc)(1)

hFE

120

Collector-Emitter Saturation Voltage(1)

(IC = 150 mAdc, IB = 15 mAdc)

VCE(Sat)

0.5

Vdc

Base-Emitter Saturation Voltage(1) ( Ic = 150 mAdc, IB = 15 mAdc)

VBE(Sat)

1.3

Vdc

Magnitude of small signal short-circuit forward current ratio (I C = 50 mAdc,

VCE = 10 Vdc, f = 20 MHz)

/hfe/

Output Capacitance (V CB = 10 Vdc, IE = 0, f = 1.0 MHz)

COBO

Input Impedance =

(I C = 5.0 mAdc, VCB = 10 Vdc, f = 1.0kHz)

hib

4.0

8.0

Ohms

Voltage Feedback Ratio

(I C = 5.0 mAdc, VCB = 10 Vdc, f = 1.0 kHz)

hrb

1.5

X 10

-4

Small-Signal Current Gain (I c = 1.0 mAdc, VcB = 5.0Vdc, f = 1.0 kHz)

(I C = 5.0 mAdc, VCB = 10 Vdc, f = 1.0 kHz)

hfe

100

Output Admittance

(I C = 5.0 mAdc, VCB = 10 Vdc, f = 1.0 kHz)

hob

0.5

µmho

Pulse response (Vcc = 20Vdc, Ic = 500mAdc)

ton + toff

(1) Pulse Test: Pulse Width

≤≤ 300 µµs, Duty Cycle ≤≤ 2.0%.

Electrical Parameters (TA @ 25

°°C unless otherwise specified)

2N1893

Datasheet# MSC0271A 5/19/97

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