MSC1041.PDF 03-12-99

2N3741

ABSOLUTE MAXIMUM RATINGS:

ABSOLUTE MAXIMUM RATINGS:

SYMBOL

CHARACTERISTIC

VALUE

UNITS

Collector-Emitter Voltage

80

Vdc

Emitter-Base Voltage

7.0

Vdc

Collector-Base Voltage

80

Vdc

Peak Collector Current

10

Adc

Continuous Collector Current

4.0

Adc

Base Current

2.0

Adc

Storage Temperature

-65 to 200

Operating Junction Temperature

-65 to 200

Total Device Dissipation

Derate above 25

Thermal Impedance

25

0.143

7

Watts

W/

Medium Power

PNP Transistors

TO-66

APPLICATIONS:

•

Drivers

•

Switches

•

Medium-Power Amplifiers

7516 Central Industrial Drive

Riviera Beach, Florida

33404

PHONE: (561) 842-0305

FAX: (561) 845-7813

DESCRIPTION:

DESCRIPTION:

These power transistors are produced by PPC's DOUBLE

DIFFUSED PLANAR process. This technology produces high

voltage devices with excellent switching speeds, frequency

response, gain linearity, saturation voltages, high current gain,

and safe operating areas. They are intended for use in

Commercial, Industrial, and Military power switching, amplifier,

and regulator applications.

Ultrasonically bonded leads and controlled die mount

techniques are utilized to further increase the SOA capability

and inherent reliability of these devices. The temperature

range to 200

the hermetically sealed package insures maximum reliability

and long life.

*

Indicates JEDEC registered data.

FEATURES:

•

•

High Gain Characteristics:

•

Excellent Safe Area Limits

•

Complementary to NPN 2N3767 (2N3741)