2N4427 datasheet(1/6 Pages) MICROSEMI

Part #	2N4427

Description	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

PDF	6 Pages

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Manufacturer	MICROSEMI [Microsemi Corporation]

Direct Link	http://www.microsemi.com

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1 / 6 page

MSC1301.PDF 10-25-99

2N4427

DESCRIPTION:

Silicon NPN transistor, designed for VHF and UHF equipment. Applications include amplifier; pre-driver, driver, and

output stages. Also suitable for oscillator and frequency-multiplier functions.

ABSOLUTE MAXIMUM RATINGS (Tcase = 25

°C)

Symbol

Parameter

Value

Unit

VCEO

Collector-Emitter

20

Vdc

VCBO

Collector-Base Voltage

40

Vdc

VEBO

Emitter-Base Voltage

2.0

Vdc

IC

Collector Current

400

mA

Thermal Data

P

D

Total Device Dissipation @ TA = 25ºC

Derate above 25ºC

1.0

5.71

Watts

mW/ ºC

1. Emitter

2. Base

3. Collector

TO-39

Features

• Silicon NPN, To-39 packaged VHF/UHF Transistor

• 1 Watt Minimum Power Output @ 175 MHz

• 500 MHz Current-Gain Bandwidth Product @ 50mA

• Power Gain, G

PE = 10dB (Min) @ 175 MHz

RF & MICROWAVE DISCRETE

LOW POWER TRANSISTORS

140 COMMERCE DRIVE

MONTGOMERYVILLE, PA

18936-1013

PHONE: (215) 631-9840

FAX: (215) 631-9855

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