SSF2N60

600V N-Channel MOSFET

www.goodark.com

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Rev.1.0

Main Product Characteristics

Features and Benefits

Description

Absolute Max Rating

Symbol

Parameter

Max.

Units

2

1.3

8

A

54

W

Linear Derating Factor

0.43

W/°C

Drain-Source Voltage

600

V

Gate-to-Source Voltage

± 30

V

Single Pulse Avalanche Energy @ L=55mH

110

mJ

Avalanche Current @ L=55mH

2

A

Operating Junction and Storage Temperature Range

-55 to + 150

°C

600V

3.6ohm(typ.)

2A

TO-220

Marking and Pin

Assignment

Schematic Diagram



Advanced Process Technology



Special designed for PWM, load switching and

general purpose applications



Ultra low on-resistance with low gate charge



Fast switching and reverse body recovery



150℃ operating temperature



Lead free product

These N-Channel enhancement mode power field effect transistors are produced using

proprietary MOSFET technology. This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching performance, and withstand high energy

pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

switch mode power supplies.