LX5510

C

L

Microsemi

Integrated Products Division

11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570

Page 3

Copyright

 2003

Rev. 0.3g, 2003-05-08

InGaP HBT 2.4 – 2.5 GHz Power Amplifier

I N T E GR A T ED

PRODUCT S

ELECTRICAL CHA RACTERISTICS

Unless otherwise specified, the following specifications apply over the operating ambient temperature 0

°C

LX5510

Parameter

Symbol

Test Conditions

Min

Typ

Max

Units

Frequency Range

f

2.4

2.5

GHz

Power Gain at Pout = 19dBm

Gp

20

dB

EVM at Pout = 19dBm

64QAM / 54Mbps

3.0

%

Total Current at Pout = 19dBm

Ictotal

120

mA

Quiescent Current

Icq

65

mA

Bias Control Reference Current

Iref

For Icq = 65mA

1.2

mA

Small-Signal Gain

S21

20

dB

Gain Flatness

∆S21

Over 100MHz

±0.5

dB

Gain Variation Over

Temperature

∆S21

-40°C to +85°C

TBD

dB

Input Return Loss

S11

10

dB

Output Return Loss

S22

10

dB

Reverse Isolation

S12

-40

dB

Second Harmonic

Pout = 19dBm

-60

dBc

Third Harmonic

Pout = 19dbm

-50

dBc

Noise Figure

NF

TBD

dB

Ramp-On Time

10 ~ 90%

100

ns

Note: All measured data was obtained on a 10mil GETEK evaluation board without heat sink.