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MRF3866R1 Datasheet(PDF) 2 Page - Microsemi Corporation |
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MRF3866R1 Datasheet(HTML) 2 Page - Microsemi Corporation |
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2 / 5 page ![]() MSC1312.PDF 10-25-99 MRF3866, R1, R2 ELECTRICAL SPECIFICATIONS (Tcase = 25 °C) STATIC (off) Symbol Test Conditions Value Min. Typ. Max. Unit BVCER Collector-Emitter Breakdown Voltage (IC = 5.0 mAdc, IB = 0, rbe = 10 Ohms) 55 - - Vdc BVCBO Collector-Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) 55 - - Vdc BVEBO Emitter-Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) 3.5 - - Vdc ICEO Collector Cutoff Current (VCE = 15 Vdc, VBE = 0 Vdc) - - .02 mA (on) HFE DC Current Gain (IC = 360 mAdc, VCE = 5.0 Vdc) (IC = 50 mAdc, VCE = 5.0 Vdc) 5.0 10 - - 250 200 DYNAMIC Symbol Test Conditions Value Min. Typ. Max. Unit COB Output Capacitance (VCB = 30 Vdc, IE = 0, f = 1.0 MHz) - 1.6 2.0 pF Ftau Current-Gain Bandwidth Product (IC = 50 mAdc, VCE = 15 Vdc, f = 200 MHz) 800 1000 - MHz |
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