MSASC150H45A

45 Volts

150 Amps

Features

• Platinum/Tungsten schottky barrier for low forward voltage drop

• Oxide passivated structure for very low leakage currents

• Guard ring protection for increased reverse energy capability

• Epitaxial structure minimizes forward voltage drop

• Hermetically sealed, low profile ceramic surface mount power package

• Low package inductance

•

Very low thermal resistance

•

TXV-level (MSASC150H45AV) or S-level (MSASC150H45AS)

screening i.a.w. Microsemi Internal Procedure PS 11.50 available

DESCRIPTION

SYMBOL

MAX.

UNIT

Peak Repetitive Reverse Voltage

45

Volts

Working Peak Reverse Voltage

45

Volts

DC Blocking Voltage

45

Volts

Average Rectified Forward Current, Tc

≤ 135°C

150

Amps

derating, forward current, Tc

≥ 135°C

(3.75)

Amps/

°C

Nonrepetitive Peak Surge Current, tp= 8.3 ms, half-sinewave

500

Amps

Peak Repetitive Reverse Surge Current, tp= 1

µs, f= 1kHz

2

Amp

Junction Temperature Range

-65 to +175

°C

Storage Temperature Range

-65 to +175

°C

Thermal Resistance, Junction to Case

θ

JC

0.25

°C/W

Maximum Ratings @ 25

°°C (unless otherwise specified)

Mechanical Outline

Datasheet# MSC0876.PDF

2830 S. Fairview St.

Santa Ana, CA 92704

PH: (714) 979-8220

FAX: (714) 966-5256

LOW VOLTAGE

DROP SCHOTTKY

DIODE