V60120C, VB60120C

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Vishay General Semiconductor

Revision: 17-Aug-15

1

Document Number: 88976

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

• Low thermal resistance

• Meets

MSL

level

1,

per

J-STD-020,

LF maximum peak of 245 °C (for TO-263AB package)

• Solder bath temperature 275 °C maximum, 10 s, per

JESD 22-B106 (for TO-220AB package)

• Material categorization: for definitions of compliance

TYPICAL APPLICATIONS

For use in high frequency converters, switching power

supplies, freewheeling diodes, OR-ing diode, DC/DC

converters and reverse battery protection.

MECHANICAL DATA

Case: TO-220AB and TO-263AB



Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS-compliant, commercial grade

Terminals:

Matte

tin

plated

leads,

solderable

per

J-STD-002 and JESD 22-B102



E3 suffix meets JESD 201 class 1A whisker test

Polarity: As marked

Mounting Torque: 10 in-lbs maximum

PRIMARY CHARACTERISTICS

2 x 30 A

120 V

300 A

0.71 V

150 °C

Package

TO-220AB, TO-263AB

Diode variations

Dual common cathode

TO-220AB

1

2

3

TMBS

®

TO-263AB

1

2

K

V60120C

VB60120C

PIN 1

PIN 2

K

HEATSINK

PIN 1

PIN 2

CASE

PIN 3

PARAMETER

SYMBOL

V60120C

VB60120C

UNIT

Maximum repetitive peak reverse voltage

120

V

Maximum average forward rectified current (fig. 1)

per device

60

A

per diode

30

Peak forward surge current 8.3 ms single half sine-wave



superimposed on rated load per diode

300

A

Non-repetitive avalanche energy



260

mJ

0.5

A

dV/dt

10 000

V/μs

Operating junction and storage temperature range

-40 to +150

°C