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ACE3006M Datasheet(PDF) 1 Page - ACE Technology Co., LTD. |
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ACE3006M Datasheet(HTML) 1 Page - ACE Technology Co., LTD. |
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1 / 7 page  ACE3006M N-Channel Enhancement Mode MOSFET VER 1.1 1 Description ACE3006M uses advanced trench technology to provide excellent RDS(ON). This device particularly suits for low voltage application such as power management of desktop computer or notebook computer power management, DC/DC converter. Features • Low r DS(on) trench technology • Low thermal impedance • Fast switching speed Applications: • PoE Power Sourcing Equipment • PoE Powered Devices • Telecom DC/DC converters • White LED boost converters Absolute Maximum Ratings Parameter Symbol Limit Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 Continuous Drain Current TC=25°C ID 30 A Pulsed Drain Current b IDM 100 Continuous Source Current (Diode Conduction) a IS 30 A Power Dissipation TC=25°C PD 50 W Operating Junction and Storage Temperature Range TJ, Tstg -55 to 175 °C |
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