SSFN2269 datasheet(2/4 Pages) GOOD-ARK

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SSFN2269

20V Dual P-Channel MOSFET

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Page 2 of 4

Rev.1.1

ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)

Parameter

Symbol

Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

VGS=0V ID=-250μA

-20

Zero Gate Voltage Drain Current

IDSS

VDS=-16V,VGS=0V

-1

μA

Gate-Body Leakage Current

IGSS

VGS=±8V,VDS=0V

±100

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

VGS(th)

VDS=VGS,ID=-250μA

-0.4

-0.7

-1

VGS=-4.5V, ID=-2A

mΩ

Drain-Source On-State Resistance

RDS(ON)

VGS=-2.5V, ID=-2A

120

mΩ

Forward Transconductance

gFS

VDS=-5V,ID=-2A

DYNAMIC CHARACTERISTICS (Note4)

Input Capacitance

Clss

530

636

Output Capacitance

Coss

100

120

Reverse Transfer Capacitance

Crss

VDS=-10V,VGS=0V,

F=1.0MHz

SWITCHING CHARACTERISTICS (Note 4)

Turn-on Delay Time

td(on)

7.2

Turn-on Rise Time

14.4

Turn-Off Delay Time

td(off)

Turn-Off Fall Time

VDD=-10V,ID=-2A

VGS=-4.5V,RGEN=2Ω

7.2

Total Gate Charge

5.5

6.6

Gate-Source Charge

Qgs

1.0

1.2

Gate-Drain Charge

Qgd

VDS=-10V,ID=-2A,

VGS=-4.5V

1.5

1.8

DRAIN-SOURCE DIODE CHARACTERISTICS

Diode Forward Voltage (Note 3)

VSD

VGS=0V,IS=-1A

-1

NOTES:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. Surface Mounted on 1in

2 FR4 Board, t ≤ 10 sec.

3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

4. Guaranteed by design, not subject to production testing.

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