Wuxi NCE Power Semiconductor Co., Ltd

Page

v1.0

2

NCE2011E

Pb Free Product

http://www.ncepower.com

Parameter

Symbol

Condition

Min

Typ

Max

Unit

Gate-Body Leakage Current

-

-

±10

μA

On Characteristics

(Note 3)

Gate Threshold Voltage

0.6

0.8

1.2

V

-

5.5

7

mΩ

Drain-Source On-State Resistance

-

7

9

mΩ

Forward Transconductance

25

-

-

S

Dynamic Characteristics

(Note4)

Input Capacitance

-

1710

-

PF

Output Capacitance

-

232

-

PF

Reverse Transfer Capacitance

F=1.0MHz

-

200

-

PF

Switching Characteristics

(Note 4)

Turn-on Delay Time

-

2.5

nS

Turn-on Rise Time

-

7.2

nS

Turn-Off Delay Time

-

49

nS

Turn-Off Fall Time

-

10.8

nS

Total Gate Charge

-

17.5

nC

Gate-Source Charge

-

1.5

-

nC

Gate-Drain Charge

-

4.5

-

nC

Drain-Source Diode Characteristics

Diode Forward Voltage

(Note 3)

-

-

1.2

V

Diode Forward Current

(Note 2)

-

-

11

A

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. Surface Mounted on FR4 Board, t ≤ 10 sec.

3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

4. Guaranteed by design, not subject to production