NCE0110AS datasheet(2/7 Pages) NCEPOWER

2 / 7 page

NCE0110AS

Pb Free Product

http://www.ncepower.com

Wuxi NCE Power Semiconductor Co., Ltd

Page

v1.0

Off Characteristics

Drain-Source Breakdown Voltage

BVDSS

VGS=0V ID=250μA

100

110

Zero Gate Voltage Drain Current

IDSS

VDS=100V,VGS=0V

μA

Gate-Body Leakage Current

IGSS

VGS=±20V,VDS=0V

±100

On Characteristics

(Note 3)

Gate Threshold Voltage

VGS(th)

VDS=VGS,ID=250μA

1.0

1.4

2.2

Drain-Source On-State Resistance

RDS(ON)

VGS=10V, ID=10A

mΩ

Forward Transconductance

gFS

VDS=10V,ID=10A

Dynamic Characteristics

(Note4)

Input Capacitance

Clss

2600

Output Capacitance

Coss

590

Reverse Transfer Capacitance

Crss

VDS=50V,VGS=0V,

F=1.0MHz

291

Switching Characteristics

(Note 4)

Turn-on Delay Time

td(on)

Turn-on Rise Time

Turn-Off Delay Time

td(off)

Turn-Off Fall Time

VDD=50V,ID=10A,RL=5Ω,

RG=1Ω,VGS=10V

Total Gate Charge

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

ID=10A,VDD=50V,VGS=10V

Drain-Source Diode Characteristics

Diode Forward Voltage

(Note 3)

VSD

VGS=0V,IS=10A

0.85

1.2

Diode Forward Current

(Note 2)

Reverse Recovery Time

trr

Reverse Recovery Charge

Qrr

TJ = 25°C, IF = 10A

di/dt = 100A/μs

(Note3)

Notes:

Repetitive Rating: Pulse width limited by maximum junction temperature.

Surface Mounted on FR4 Board, t ≤ 10 sec.

Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

Guaranteed by design, not subject to production

NCE0110AS Datasheet(PDF) 2 Page - Wuxi NCE Power Semiconductor Co., Ltd

NCE0110AS Datasheet(HTML) 2 Page - Wuxi NCE Power Semiconductor Co., Ltd

Html Pages

1 2 3 4 5 6 7

Datasheet Download

Link URL