CEP10N65 datasheet(2/4 Pages) CET

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Electrical Characteristics Tc = 25 C unless otherwise noted

Parameter

Symbol

Min

Units

Off Characteristics

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate Body Leakage Current, Forward

Gate Threshold Voltage

Static Drain-Source

On-Resistance

BVDSS

IDSS

IGSSR

IGSSF

0.85

0.71

-100

100

Ω

Gate Body Leakage Current, Reverse

On Characteristics b

Dynamic Characteristics c

Input Capacitance

Reverse Transfer Capacitance

Output Capacitance

Switching Characteristics c

Turn-On Delay Time

Turn-Off Fall Time

Turn-Off Delay Time

Turn-On Rise Time

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Drain-Source Diode Characteristics and Maximun Ratings

Drain-Source Diode Forward Current

Drain-Source Diode Forward Voltage b

Test Condition

VGS = 0V, ID = 250µA

VGS(th)

RDS(on)

Ciss

Coss

Crss

td(on)

td(off)

Qgs

Qgd

VSD

Typ

Max

650

VDS = 650V, VGS = 0V

VGS = 30V, VDS = 0V

VGS = -30V, VDS = 0V

VGS = VDS, ID = 250µA

VGS = 10V, ID = 5A

VDD = 300V, ID =10A,

VGS = 10V, RGEN = 25Ω

VDS = 480V, ID = 10A,

VGS = 10V

VDS = 25V, VGS = 0V,

f = 1.0 MHz

1700

185

104

1.4

IS f

VGS = 0V, IS = 10A g

VDS = 520V, Tc = 125 C

Notes :

a.Repetitive Rating : Pulse width limited by maximum junction temperature .

b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% .

c.Guaranteed by design, not subject to production testing.

d.Limited only by maximum temperature allowed .

e.Pulse width limited by safe operating area .

f.Full package IS(max) = 6A .

g.Full package VSD test condition IS = 6A .

h.L = 15mH, IAS = 8.5A, VDD = 50V, RG = 25Ω, Starting TJ = 25 C

CEP10N65/CEB10N65

CEF10N65

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