ECH8652 datasheet(4/7 Pages) ONSEMI

Part #	ECH8652

Description	P-Channel Power MOSFET

PDF	7 Pages

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Manufacturer	ONSEMI [ON Semiconductor]

Direct Link	http://www.onsemi.com

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Ambient Temperature, Ta --

°C

PD -- Ta

A S O

Drain-to-Source Voltage, VDS -- V

Total Gate Charge, Qg -- nC

VGS -- Qg

012345678

911

--0.5

--1.0

--1.5

--2.0

--2.5

--3.0

--3.5

--4.0

--4.5

IT12955

IT12956

IT12957

VDS= --6V

ID= --6A

--0.1

--1.0

0.4

100

120

140

160

1.0

1.4

1.5

1.3

1.8

0.2

0.8

0.6

1.2

1.6

--0.01

--0.1

--1.0

Operation in this

area is limited by RDS(on).

PW≤10

μs

100ms

operation

a=25

°C)

10ms

1ms

IDP= --40A

ID= --6A

1unit

--10

--100

--10

Ta=25

°C

Single pulse

When mounted on ceramic substrate (900mm2

×0.8mm)

Total

Dissipation

When mounted on ceramic substrate

(900mm2

×0.8mm)

ECH8652

No. A0935-4/7

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