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MMDF3N06HD Datasheet(PDF) 2 Page - ON Semiconductor |
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MMDF3N06HD Datasheet(HTML) 2 Page - ON Semiconductor |
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2 / 12 page  MMDF3N06HD http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (VGS = 0 Vdc, ID = 0.25 mAdc) V(BR)DSS 60 − − Vdc Zero Gate Voltage Drain Current (VDS = 48 Vdc, VGS = 0 Vdc) (VDS = 48 Vdc, VGS = 0 Vdc, TJ = 125°C) IDSS − − 0.001 0.05 1.0 25 µAdc Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc) IGSS − 12 100 nAdc ON CHARACTERISTICS (Note 2.) Gate Threshold Voltage (VDS = VGS, ID = 0.25 mAdc) VGS(th) 1.0 − − Vdc Static Drain−to−Source On−Resistance (VGS = 10 Vdc, ID = 3.3 Adc) (VGS = 4.5 Vdc, ID = 2.5 Adc) RDS(on) − − 67.5 82.5 100 200 m W Forward Transconductance (VDS = 15 Vdc, ID = 1.5 Adc) gFS − 7.5 − Mhos DYNAMIC CHARACTERISTICS Input Capacitance (V 25 Vd V 0Vd Ciss − 442 618 pF Output Capacitance (VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Coss − 97.6 137 Transfer Capacitance f = 1.0 MHz) Crss − 24.4 34.2 SWITCHING CHARACTERISTICS (Note 3.) Turn−On Delay Time td(on) − 10.6 22.1 ns Rise Time (VDD = 30 Vdc, ID = 3.3 Adc, VGS =45Vdc tr − 15.9 31.8 Turn−Off Delay Time VGS = 4.5 Vdc, RG = 30 Ω) td(off) − 23.8 47.6 Fall Time RG 30 Ω) tf − 14.7 29.4 Turn−On Delay Time td(on) − 7.0 14 ns Rise Time (VDD = 15 Vdc, ID = 3.0 Adc, VGS =10Vdc tr − 4.8 9.6 Turn−Off Delay Time VGS = 10 Vdc, RG = 9.1 Ω) td(off) − 32.4 64.8 Fall Time RG 9.1 Ω) tf − 14.2 28.4 Gate Charge (S Fi 8) QT − 14.5 29 nC (See Figure 8) (VDS = 30 Vdc, ID = 3.3 Adc, Q1 − 1.8 − (VDS 30 Vdc, ID 3.3 Adc, VGS = 10 Vdc) Q2 − 3.5 − Q3 − 3.75 − SOURCE−DRAIN DIODE CHARACTERISTICS Forward On−Voltage (IS = 1.7 Adc, VGS = 0 Vdc) (IS = 1.7 Adc, VGS = 0 Vdc, TJ = 125°C) VSD − − 0.78 0.65 1.2 − Vdc Reverse Recovery Time (I 17Ad V 0Vd trr − 27.9 − ns (IS = 1.7 Adc, VGS = 0 Vdc, dIS/dt = 100 A/µs) ta − 23 − dIS/dt = 100 A/µs) tb − 4.9 − Reverse Recovery Stored Charge QRR − 0.038 − µC 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. 3. Switching characteristics are independent of operating junction temperature. |
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