Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.NET

X  

MTP1302 Datasheet(PDF) 2 Page - ON Semiconductor

Part # MTP1302
Description  N?묬hannel Power MOSFET
PDF  8 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MTP1302 Datasheet(HTML) 2 Page - ON Semiconductor

  MTP1302 Datasheet HTML 1Page - ON Semiconductor MTP1302 Datasheet HTML 2Page - ON Semiconductor MTP1302 Datasheet HTML 3Page - ON Semiconductor MTP1302 Datasheet HTML 4Page - ON Semiconductor MTP1302 Datasheet HTML 5Page - ON Semiconductor MTP1302 Datasheet HTML 6Page - ON Semiconductor MTP1302 Datasheet HTML 7Page - ON Semiconductor MTP1302 Datasheet HTML 8Page - ON Semiconductor  
Zoom Inzoom in Zoom Outzoom out
 2 / 8 page
background image
MTP1302
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
V(BR)DSS
30
−
−
Vdc
Zero Gate Voltage Drain Current
(VDS = 30 Vdc, VGS = 0 Vdc)
(VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
−
−
−
−
10
100
µAdc
Gate−Body Leakage Current
(VGS = ± 20 Vdc, VDS = 0 Vdc)
IGSS
−
−
100
nAdc
ON CHARACTERISTICS (Note 1.)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
VGS(th)
1.0
1.5
2.0
Vdc
Static Drain−to−Source On−Resistance
(VGS = 10 Vdc, ID = 10 Adc)
(VGS = 4.5 Vdc, ID = 5.0 Adc)
(VGS = 10 Vdc, ID = 42 Adc)
RDS(on)
−
−
−
19
26
19.5
22
29
−
mW
Drain−to−Source On−Voltage
(VGS = 10 Vdc, ID = 20 Adc)
(VGS = 10 Vdc, ID = 10 Adc, TJ = 150°C)
(VGS = 10 Vdc, ID = 42 Adc)
VDS(on)
−
−
−
0.38
−
0.82
0.5
0.33
−
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 10 Adc)
gFS
10
16
−
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
25 Vd V
0 Vd
Ciss
−
755
1162
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Coss
−
370
518
Transfer Capacitance
f = 1.0 MHz)
Crss
−
102
204
SWITCHING CHARACTERISTICS (Note 2.)
Turn−On Delay Time
td(on)
−
7.2
15
ns
Rise Time
(VDD = 15 Vdc, ID = 20 Adc,
VGS = 10 Vdc
tr
−
52
104
Turn−Off Delay Time
VGS = 10 Vdc,
RG = 9.1 Ω)
td(off)
−
45
90
Fall Time
RG 9.1 Ω)
tf
−
73
146
Gate Charge
QT
−
14.5
21.8
nC
(VDS = 24 Vdc, ID = 20 Adc,
Q1
−
2.2
−
(VDS 24 Vdc, ID 20 Adc,
VGS = 5.0 Vdc)
Q2
−
8.8
−
Q3
−
6.8
−
Gate Charge
QT
−
27
40.5
nC
(VDS = 24 Vdc, ID = 20 Adc,
Q1
−
2.2
−
(VDS 24 Vdc, ID 20 Adc,
VGS = 10 Vdc)
Q2
−
10
−
Q3
−
7.2
−
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(IS = 20 Adc, VGS = 0 Vdc)
(IS = 20 Adc, VGS = 0 Vdc,
TJ = 125°C)
VSD
−
−
0.83
0.79
1.1
−
Vdc
Reverse Recovery Time
trr
−
38
−
ns
(IS = 20 Adc, VGS = 0 Vdc,
ta
−
19
−
(IS 20 Adc, VGS 0 Vdc,
dIS/dt = 100 A/µs)
tb
−
20
−
Reverse Recovery Stored Charge
QRR
−
36
−
µC
1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.



Html Pages

1 2 3 4 5 6 7 8


Datasheet Download

Go To PDF Page


Link URL



Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link to Datasheet    |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com