© Semiconductor Components Industries, LLC, 2000

September, 2004 − Rev. XXX

1

Publication Order Number:

MTP1306/D

MTP1306

Preferred Device

Power MOSFET

75 Amps, 30 Volts

N−Channel TO−220

This Power MOSFET is designed to withstand high energy in the

avalanche and commutation modes. The energy efficient design also

offers a drain−to−source diode with a fast recovery time. Designed for

low voltage, high speed switching applications in power supplies,

converters and PWM motor controls, these devices are particularly

well suited for bridge circuits where diode speed and commutating

safe operating area are critical and offer additional safety margin

against unexpected voltage transients.

to a Discrete Fast Recovery Diode

Rating

Symbol

Value

Unit

Drain−to−Source Voltage

30

Vdc

30

Vdc

Gate−to−Source Voltage

− Continuous

± 20

± 20

Vdc

Vpk

Drain Current

− Continuous

− Continuous @ 100

°C

75

59

225

Adc

Apk

Total Power Dissipation

Derate above 25

°C

150

1.2

Watts

W/

°C

Operating and Storage Temperature

Range

− 55 to

150

°C

Single Pulse Drain−to−Source Avalanche

280

mJ

Thermal Resistance

− Junction−to−Case

− Junction−to−Ambient

0.8

62.5

°C/W

Maximum Lead Temperature for Soldering

Purposes, 1/8

″ from Case for 5.0

seconds

260

°C

75 AMPERES

30 VOLTS

Device

Package

Shipping

ORDERING INFORMATION

MTP1306

TO−220AB

50 Units/Rail

TO−220AB

CASE 221A

STYLE 5

1

2

3

4

http://onsemi.com

N−Channel

D

S

G

MARKING DIAGRAM

& PIN ASSIGNMENT

MTP1306

= Device Code

LL

= Location Code

Y

= Year

WW

= Work Week

MTP1306

LLYWW

1

Gate

3

Source

4

Drain

2

Drain

Preferred devices are recommended choices for future use

and best overall value.