© Semiconductor Components Industries, LLC, 2006

August, 2006 − Rev. 3

1

Publication Order Number:

MMDF4P03HD/D

MMDF4P03HD

Preferred Device

Power MOSFET

4 A, 30 V, P−Channel SO−8, Dual

Dual MOSFET devices are designed for use in low voltage, high

speed switching applications where power efficiency is important.

Typical applications are dc−dc converters, and power management in

portable and battery powered products such as computers, printers,

cellular and cordless phones. They can also be used for low voltage

motor controls in mass storage products such as disk drives and tape

drives.

Rating

Symbol

Value

Unit

Drain−to−Source Voltage

30

Vdc

Gate−to−Source Voltage − Continuous

± 20

Vdc

4.0

20

Adc

Apk

1.7

Adc

(Note 1)

2.0

Watts

Operating and Storage Temperature Range

− 55 to

150

°C

Single Pulse Drain−to−Source Avalanche

450

mJ

Thermal Resistance − Junction−to−Ambient

62.5

°C/W

Maximum Lead Temperature for Soldering

Purposes, (1/8″ from Case for 10 s)

260

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1 Mounted on G10/FR4 glass epoxy board using minimum recommended

footprint.

Source−1

1

2

3

4

8

7

6

5

Top View

Gate−1

Source−2

Gate−2

Drain−1

Drain−1

Drain−2

Drain−2

P−Channel

D

S

G

4 AMPERES

30 VOLTS

Device

Package

ORDERING INFORMATION

MMDF4P03HDR2

SO−8

2500 Tape & Reel

SO−8, Dual

CASE 751

STYLE 11

MARKING

DIAGRAM

A

= Assembly Location

Y

= Year

WW

= Work Week

PIN ASSIGNMENT

Preferred devices are recommended choices for future use

and best overall value.

D

S

G

1

8

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

DP0303

AYWW

1

8

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