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NSVR0230P2 Datasheet(PDF) 1 Page - ON Semiconductor

Part # NSVR0230P2
Description  Schottky Barrier Diode
PDF  3 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NSVR0230P2 Datasheet(HTML) 1 Page - ON Semiconductor

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© Semiconductor Components Industries, LLC, 2013
September, 2013 − Rev. 2
1
Publication Order Number:
NSR0230P2/D
NSR0230P2, NSVR0230P2,
Schottky Barrier Diode
These Schottky barrier diodes are designed for high−speed
switching applications, circuit protection, and voltage clamping.
Extremely low forward voltage reduces conduction loss. Miniature
surface mount package is excellent for hand−held and portable
applications where space is limited.
Features
• Extremely Fast Switching Speed
• Extremely Low Forward Voltage 0.325 V (max) @ IF = 10 mA
• Low Reverse Current
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Reverse Voltage
VR
30
Vdc
Forward Current DC
IF
200
mA
Forward Current Surge Peak
(60 Hz, 1 cycle)
IFSM
1.0
A
ESD Rating: Class 3B per Human Body Model
ESD Rating: Class C per Machine Model
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR−5 Board,
(Note 1) TA = 25°C
Derate above 25°C
PD
200
2.0
mW
mW/°C
Thermal Resistance, Junction−to−Ambient
RqJA
600
°C/W
Junction and Storage
Temperature Range
TJ, Tstg
−55 to
+125
°C
1. FR−5 Minimum Pad.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol Min
Typ
Max
Unit
Reverse Leakage
(VR = 10 V)
IR
−
−
10
mA
Forward Voltage
(IF = 10 mA)
(IF = 200 mA)
VF
−
−
−
−
0.325
0.500
Vdc
30 V SCHOTTKY
BARRIER DIODE
Device
Package
Shipping†
ORDERING INFORMATION
NSR0230P2T5G
SOD−923
(Pb−Free)
2 mm Pitch
8000/Tape & Reel
1
CATHODE
2
ANODE
http://onsemi.com
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
SOD−923
CASE 514AA
K = Specific Device Code*
(Character is rotated 270° clockwise)
M = Month Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
MARKING
DIAGRAM
K MG
G
1
2
12
NSVR0230P2T5G SOD−923
(Pb−Free)
2 mm Pitch
8000/Tape & Reel


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