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DMTH4004SPSQ Datasheet(PDF) 2 Page - Diodes Incorporated

Part # DMTH4004SPSQ
Description  40V 175C N-CHANNEL ENHANCEMENT MODE MOSFET
PDF  7 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMTH4004SPSQ Datasheet(HTML) 2 Page - Diodes Incorporated

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DMTH4004SPSQ
Document number: DS37562 Rev. 3 - 2
2 of 7
www.diodes.com
October 2015
© Diodes Incorporated
DMTH4004SPSQ
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Drain-Source Voltage
VDSS
40
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current (Note 6)
TA = +25°C
TA = +70°C
ID
31
26
A
Continuous Drain Current (Note 7)
TC = +25°C
ID
100
A
TC = +100°C
(Note 9)
100
Maximum Continuous Body Diode Forward Current (Note 6)
IS
100
A
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
IDM
200
A
Avalanche Current, L=0.2mH
IAS
45
A
Avalanche Energy, L=0.2mH
EAS
200
mJ
Thermal Characteristics
Characteristic
Symbol
Value
Units
Total Power Dissipation (Note 6)
TA = +25°C
PD
3.6
W
Thermal Resistance, Junction to Ambient (Note 6)
RθJA
41
°C/W
Total Power Dissipation (Note 7)
TC = +25°C
PD
167
W
Thermal Resistance, Junction to Case (Note 7)
RθJC
0.9
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +175
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BVDSS
40
—
—
V
VGS = 0V, ID = 1mA
Zero Gate Voltage Drain Current
IDSS
—
—
1
μA
VDS = 32V, VGS = 0V
Gate-Source Leakage
IGSS
—
—
±100
nA
VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
VGS(th)
2
—
4
V
VDS = VGS, ID = 250μA
Static Drain-Source On-Resistance
RDS(ON)
—
2.3
2.7
m
Ω
VGS = 10V, ID = 90A
Diode Forward Voltage
VSD
—
0.9
1.2
V
VGS = 0V, IS = 20A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Ciss
—
4,305
—
pF
VDS = 25V, VGS = 0V,
f = 1MHz
Output Capacitance
Coss
—
1,441
—
Reverse Transfer Capacitance
Crss
—
102
—
Gate resistance
Rg
—
0.77
—
Ω
VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge
Qg
—
68.6
—
nC
VDD = 20V, ID = 90A,
VGS = 10V
Gate-Source Charge
Qgs
—
16.8
—
Gate-Drain Charge
Qgd
—
14.2
—
Turn-On Delay Time
tD(ON)
—
9.5
—
nS
VDD = 20V, VGS = 10V,
ID = 90A, RG = 3.5Ω
Turn-On Rise Time
tR
—
6.7
—
Turn-Off Delay Time
tD(OFF)
—
26.4
—
Turn-Off Fall Time
tF
—
8.1
—
Body Diode Reverse Recovery Time
tRR
—
52.4
—
nS
IF = 50A, di/dt = 100A/μs
Body Diode Reverse Recovery Charge
QRR
—
78.2
—
nC
Notes:
6. Device mounted with exposed drain pad on 25mm by 25mm 2oz copper on a single- sided 1.6mm FR4 PCB; device is measured under still air conditions
whilst operating in a steady state.
7. Thermal resistance from junction to soldering point (on the exposed drain pad).
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing.



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