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DMTH6010LPS Datasheet(PDF) 4 Page - Diodes Incorporated |
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DMTH6010LPS Datasheet(HTML) 4 Page - Diodes Incorporated |
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4 / 7 page ![]() DMTH6010LPS Document number: DS37354 Rev. 5 - 2 4 of 7 www.diodes.com November 2015 © Diodes Incorporated DMTH6010LPS 0.01 0.1 1 10 100 1000 0.1 1 10 100 T = 175°C J (m ax ) T = 25°C C V = 10V GS Single Pulse DUT on 1 * MRP Board P = 1s W P = 100ms W P = 10ms W P = 1ms W P = 100µs W P = 10µs W P = 1µs W V , DRAIN-SOURCE VOLTAGE (V) DS Figure 11 SOA, Safe Operation Area R DS(on) Limited 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 -50 -25 0 25 50 75 100 125 150 175 T J, JUNCTION TEMPERATURE (℃) Figure 7. Gate Threshold Variation vs. junction Temperature I D=250μA I D=1mA 0 5 10 15 20 25 30 0 0.3 0.6 0.9 1.2 1.5 V SD, SOURCE-DRAIN VOLTAGE (V) Figure 8. Diode Forward Voltage vs. Current V GS=0V, TJ=-55℃ V GS=0V, TJ=25℃ V GS=0V, TJ=85℃ V GS=0V, TJ=175℃ V GS=0V, TJ=150℃ V GS=0V, TJ=125℃ 1 10 100 1000 10000 0 10 20 30 40 V DS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Typical Junction Capacitance f=1MHz Ciss Coss Crss 0 1 2 3 4 5 6 7 8 9 10 0 5 10 15 20 25 30 35 40 45 Q g, TOTAL GATE CHARGE (nC) Figure 10. Gate Charge V DS=30V, ID=20A |
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