LM7332MASLASHNOPB datasheet(7/34 Pages) TI1

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LM7332

www.ti.com

SNOSAV4B – APRIL 2008 – REVISED JANUARY 2016

±5-V Electrical Characteristics (continued)

Unless otherwise specified, all limits are ensured for TA = 25°C, V

+ = +5 V, V− = −5 V, V

CM = 0 V, VO = 0 V, and RL > 1 MΩ to

0 V.

(1)

PARAMETER

TEST CONDITIONS

MIN (2)

TYP (3)

MAX (2)

UNIT

RL = 10 kΩ to 0 V

250

VID = 100 mV

At the temperature extremes

300

Output swing

high

RL = 2 kΩ to 0 V

125

350

VID = 100 mV

At the temperature extremes

400

mV from

either rail

RL = 10 kΩ to 0 V

250

VID = −100 mV

At the temperature extremes

300

Output swing

low

RL = 2 kΩ to 0V

350

VID = −100 mV

At the temperature extremes

400

Sourcing from V+, VID = 200 mV

(6)

120

ISC

Output short circuit current

Sinking to V−, VID = −200 mV

(6)

100

IOUT

Output current

VID = ±200 mV, VO = 1 V from rails

±65

No Load, VCM = −4.5 V

1.5

2.4

Total supply current

At the temperature extremes

2.6

AV = +1, VI = 8-V step, RL = 1 MΩ,

Slew rate(7)

13.2

V/µs

CL = 10 pF

ROUT

Close-loop output resistance

AV = +1, f = 100 kHz

Ω

Unity-gain frequency

RL = 10 MΩ, CL = 20 pF

7.9

MHz

GBWP

Gain bandwidth product

f = 50 kHz

19.9

MHz

Input-referred voltage noise

f = 2 kHz

14.7

nV/

√HZ

Input-referred current noise

f = 2 kHz

1.3

pA/

√HZ

AV = +2, RL = 100 kΩ, f = 1 kHz

THD+N

Total harmonic distortion + noise

−87

VO = 8 VPP

CT Rej.

Crosstalk rejection

f = 3 MHz, driver RL = 10 kΩ

(6)

Short-circuit test is a momentary test. Output short circuit duration is infinite for VS ≤ 6 V at room temperature and below. For VS > 6 V,

allowable short circuit duration is 1.5 ms.

(7)

Slew rate is the slower of the rising and falling slew rates. Connected as a voltage follower.

6.7

±15-V Electrical Characteristics

Unless otherwise specified, all limits are ensured for TA = 25°C, V

+ = +15 V, V− = −15 V, V

CM = 0 V, VO = 0 V, and RL > 1 MΩ

to 0 V.

(1)

PARAMETER

TEST CONDITIONS

MIN (2)

TYP (3)

MAX (2)

UNIT

VCM = −14.5 V and VCM = 14.5 V

−5

±2

VOS

Input offset voltage

At the temperature extremes

−6

Input offset voltage temperature

VCM = −14.5 V and VCM = 14.5 V

TC VOS

±2

µV/°C

drift

(4)

See (5)

−2

±1

Input bias current

µA

At the temperature extremes

−2.5

2.5

(1)

Electrical Characteristics values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in

very limited self-heating of the device such that TJ = TA. No ensured specification of parametric performance is indicated in the electrical

tables under conditions of internal self-heating where TJ > TA.

(2)

All limits are ensured by testing or statistical analysis.

(3)

Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary

over time and will also depend on the application and configuration. The typical values are not tested and are not ensured on shipped

production material.

(4)

Offset voltage temperature drift determined by dividing the change in VOS at temperature extremes into the total temperature change.

(5)

Positive current corresponds to current flowing in the device.

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