D3V3L2B3LP10

Document number: DS37661 Rev. 1 - 2

2 of 6

www.diodes.com

June 2015

© Diodes Incorporated

D3V3L2B3LP10

Characteristic

Symbol

Value

Unit

Conditions

Peak Pulse Power Dissipation

35

W

8/20

μs, per Figure 1

Peak Pulse Current

5

A

8/20

μs, per Figure 1

ESD Protection

– Contact Discharge

±23

kV

IEC 61000-4-2 Standard

ESD Protection

– Air Discharge

±25

kV

IEC 61000-4-2 Standard

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Package Power Dissipation (Note 5)

250

mW

Thermal Resistance, Junction to Ambient (Note 5)

500

°C/W

Operating and Storage Temperature Range

-65 to +150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Conditions

Reverse Standoff Voltage

—

—

3.3

V

—

Channel Leakage Current (Note 6)

—

10

200

nA

Clamping Voltage, Positive Transients

—

4.5

5.4

V

—

5.8

7.0

Breakdown Voltage

3.8

—

6.5

V

Differential Resistance

—

0.3

—

Ω

Channel Input Capacitance

—

10

13

pF

Notes:

5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at

http://www.diodes.com.

6. Short duration pulse test used to minimize self-heating effect.

0

25

50

75

100

0

25

50

75

100

125

150

175

200

T AMBIENT TEMPERATURE ( C)

A

°

Figure 1 Pulse Derating Curve

5

5.5

6

6.5

7

7.5

8

8.5

9

9.5

10

10.5

11

0

1

2

3

0.5

1.5

2.5

3.3

Figure 2 Typical Capacitance

V , REVERSE VOLTAGE (V)

R

f = 1MHz