AP3785T

Document number: DS37552 Rev. 4 - 2

5 of 18

www.diodes.com

September 2015

© Diodes Incorporated

AP3785T

Symbol

Parameter

Rating

Unit

Voltage at VCC to GND

-0.3 to 30

V

–

Voltage at OUT, EM to GND

-0.3 to 22

V

–

Voltage at CS, CBC,OTP to GND

-0.3 to 7.4

V

FB Input Voltage

-0.7 to 7.4

V

Operating Junction Temperature

-40 to +150

ºC

Storage Temperature

-65 to +150

ºC

Lead Temperature (Soldering, 10 sec)

+300

ºC

θ

JC

Thermal Resistance (Junction to Case)

20

ºC/W

θ

JA

Thermal Resistance (Junction to Ambient)

(

Note 6)

100

ºC/W

–

ESD (Human Body Model)

4000

V

–

ESD (Machine Model)

200

V

Notes:

5.

Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and

functional operation of the device at these or any other conditions beyond those indicated under “Recommended Operating Conditions” is not implied.

Exposure to “Absolute Maximum Ratings” for extended periods may affect device reliability.

6. The device is mounted on FR-4 substrate PCB, 2 oz copper, with 1 inch

C, unless otherwise specified.)

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

STARTUP AND UVLO SECTION

Startup Threshold

–

11

13

15

V

Minimum Operating Voltage

–

5.5

5.9

6.3

V

STANDBY CURRENT SECTION

Startup Current

startup

0

0.2

0.6

A

Standby Current

At no load

5

17.5

30

Operating Current

Static current

350

450

550

DRIVING OUTPUT SECTION

Gate Voltage

–

9

10.5

12

V

Peak Driver Source Current

–

15

20.5

26

mA

Sink Resistance

–

2

2.3

2.6

