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BCW68F Datasheet(PDF) 2 Page - Infineon Technologies AG

Part # BCW68F
Description  PNP Silicon AF Transistors
PDF  5 Pages
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

BCW68F Datasheet(HTML) 2 Page - Infineon Technologies AG

  BCW68F Datasheet HTML 1Page - Infineon Technologies AG BCW68F Datasheet HTML 2Page - Infineon Technologies AG BCW68F Datasheet HTML 3Page - Infineon Technologies AG BCW68F Datasheet HTML 4Page - Infineon Technologies AG BCW68F Datasheet HTML 5Page - Infineon Technologies AG  
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BCW67, BCW68
2
Jul-10-2001
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0
BCW67
BCW68
V(BR)CEO
32
45
-
-
-
-
V
Collector-base breakdown voltage
IC = 10 µA, IB = 0
BCW67
BCW68
V(BR)CBO
45
60
-
-
-
-
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
V(BR)EBO
5
-
-
Collector cutoff current
VCB = 32 V, IE = 0
VCB = 45 V, IE = 0
BCW67
BCW68
ICBO
-
-
-
-
20
20
nA
Collector cutoff current
VCB = 32 V, IE = 0 , TA = 150 °C
VCB = 45 V, IE = 0 , TA = 150 °C
BCW67
BCW68
ICBO
-
-
-
-
20
20
µA
Emitter cutoff current
VEB = 4 V, IC = 0
IEBO
-
-
20
nA
DC current gain 1)
IC = 100 µA, VCE = 10 V
hFE-grp.A/F
hFE-grp.B/G
hFE-grp.C/H
hFE
35
50
80
-
-
-
-
-
-
-
DC current gain 1)
IC = 10 mA, VCE = 1 V
hFE-grp.A/F
hFE-grp.B/G
hFE-grp.C/H
hFE
75
120
180
-
-
-
-
-
-
DC current gain 1)
IC = 100 mA, VCE = 1 V
hFE-grp.A/F
hFE-grp.B/G
hFE-grp.C/H
hFE
100
160
250
160
250
350
250
400
630
1) Pulse test: t
≤ 300µs, D = 2%



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