BFR35AP datasheet(1/3 Pages) INFINEON

Part #	BFR35AP

Description	NPN Silicon RF Transistor

PDF	3 Pages

Scroll/Zoom	100%

Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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1 / 3 page

Aug-01-2001

1

BFR35AP

1

2

3

VPS05161

NPN Silicon RF Transistor

For low distortion broadband amplifiers and

oscillators up to 2GHz at collector currents

from 0.5mA to 20 mA

ESD: Electrostatic discharge sensitive device, observe handling precaution!

Type

Marking

Pin Configuration

Package

BFR35AP

GEs

1 = B

2 = E

3 = C

SOT23

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

VCEO

15

V

Collector-emitter voltage

VCES

20

Collector-base voltage

VCBO

20

Emitter-base voltage

VEBO

2.5

Collector current

IC

30

mA

Base current

IB

4

Total power dissipation1)

TS 48°C

Ptot

280

mW

Junction temperature

Tj

150

°C

Ambient temperature

TA

-65 ... 150

Storage temperature

Tstg

-65 ... 150

Thermal Resistance

Parameter

Symbol

Value

Unit

Junction - soldering point2)

RthJS

365

K/W

1TS is measured on the collector lead at the soldering point to the pcb

2For calculation of RthJA please refer to Application Note Thermal Resistance

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BFR35AP Datasheet(PDF) 1 Page - Infineon Technologies AG

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