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BSP170P Datasheet(PDF) 1 Page - Infineon Technologies AG |
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BSP170P Datasheet(HTML) 1 Page - Infineon Technologies AG |
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1 / 8 page  2002-01-16 Page 1 Final data BSP 170 P SIPMOS Small-Signal-Transistor Product Summary VDS -60 V RDS(on) 0.3 Ω ID -1.9 A Feature • P-Channel • Enhancement mode • Avalanche rated • dv/dt rated SOT-223 VPS05163 1 2 3 4 Gate pin1 Drain pin 2 Source pin 3 Type Package Ordering Code BSP 170 P SOT-223 Q67041-S4018 Maximum Ratings ,at Tj = 25 °C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current TA=25°C TA=70°C ID -1.9 -1.5 A Pulsed drain current TA=25°C ID puls -7.6 Avalanche energy, single pulse ID=-1.9 A , VDD=-25V, RGS=25Ω EAS 70 mJ Avalanche energy, periodic limited by Tjmax EAR 0.18 Reverse diode dv/dt IS=-1.9A, VDS=-48V, di/dt=-200A/µs, Tjmax=150°C dv/dt -6 kV/µs Gate source voltage VGS ±20 V Power dissipation TA=25°C Ptot 1.8 W Operating and storage temperature Tj , Tstg -55... +150 °C IEC climatic category; DIN IEC 68-1 55/150/56 |
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