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STB35N60DM2 Datasheet(PDF) 1 Page - STMicroelectronics

Part # STB35N60DM2
Description  Extremely low gate charge and input capacitance
PDF  15 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB35N60DM2 Datasheet(HTML) 1 Page - STMicroelectronics

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September 2015
DocID028331 Rev 1
1/15
This is information on a product in full production.
www.st.com
STB35N60DM2
N-channel 600 V, 0.094
Ω typ., 28 A MDmesh™ DM2
Power MOSFET in a D²PAK package
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code
VDS
RDS(on)
max.
ID
PTOT
STB35N60DM2
600 V
0.110
Ω
28 A
210 W
Fast-recovery body diode
Extremely low gate charge and input
capacitance
Low on-resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Zener-protected
Applications
Switching applications
Description
This high voltage N-channel Power MOSFET is
part of the MDmesh™ DM2 fast recovery diode
series. It offers very low recovery charge (Qrr)
and time (trr) combined with low RDS(on), rendering
it suitable for the most demanding high efficiency
converters and ideal for bridge topologies and
ZVS phase-shift converters.
Table 1: Device summary
Order code
Marking
Package
Packing
STB35N60DM2
35N60DM2
D²PAK
Tape and reel
1
3
TAB
D2PAK


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