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STD46N6F7 Datasheet(PDF) 1 Page - STMicroelectronics |
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STD46N6F7 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 14 page  January 2016 DocID028323 Rev 2 1/14 This is information on a product in full production. www.st.com STD46N6F7 N- channel 60 V, 0.012 Ω typ., 15 A STripFET™ F7 Power MOSFET in a DPAK package Datasheet - production data Figure 1: Internal schematic diagram Features Order code VDS RDS(on) max. ID STD46N6F7 60 V 0.014 Ω 15 A Among the lowest RDS(on) on the market Excellent figure of merit (FoM) Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness Applications Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on- state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Table 1: Device summary Order code Marking Package Packaging STD46N6F7 46N6F7 DPAK Tape and reel AM01475v1_Tab D(2, TAB) G(1) S(3) |
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Similar Description - STD46N6F7 |
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