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STF27N60M2-EP Datasheet(PDF) 1 Page - STMicroelectronics |
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STF27N60M2-EP Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 13 page ![]() January 2016 DocID028863 Rev 1 1/13 This is information on a product in full production. www.st.com STF27N60M2-EP N- channel 600 V, 0.150 Ω typ., 20 A MDmesh™ M2 EP Power MOSFET in TO-220FP package Datasheet - production data Figure 1: Internal schematic diagram Features Order code V DS RDS(on) max ID STF27N60M2-EP 600 V 0.163 Ω 20 A Extremely low gate charge Excellent output capacitance (COSS) profile Very low turn-off switching losses 100% avalanche tested Zener-protected Applications Switching applications Tailored for very high frequency converters (f > 150 kHz) Description These devices are N-channel Power MOSFETs developed using MDmesh™ M2 EP enhanced performance technology. Thanks to their strip layout and an improved vertical structure, these devices exhibit low on-resistance, optimized switching characteristics with very low turn-off switching losses, rendering them suitable for the most demanding very high frequency converters. Table 1: Device summary Order code Marking Package Packing STF27N60M2-EP 27N60M2EP TO-220FP Tube TO-220FP AM15572v1_no_tab D(2) G(1) S(3) |
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