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ESDAXLC4-1BF3 Datasheet(PDF) 3 Page - STMicroelectronics |
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ESDAXLC4-1BF3 Datasheet(HTML) 3 Page - STMicroelectronics |
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3 / 10 page ![]() ESDAXLC4-1BF3 Characteristics Doc ID 018522 Rev 2 3/10 Figure 3. Junction capacitance versus reverse applied voltage (typical values) Figure 4. Junction capacitance versus frequencies (typical values) 0 200 400 600 800 1000 1200 01234 5 F=1 Mhz V = 30 mV V = 0V T = 25 °C osc RMS r j C(pF) V (V) R 0 100 200 300 400 0 500 1000 1500 2000 2500 3000 C(pF) F(MHz) F = 20 MHz –3 GHz V = 30 mV V= 0 V T = 25 °C osc RMS r j Figure 5. S21 attenuation measurement result Figure 6. Variation of leakage current versus junction temperature (typical values) 0 1 100 25 50 75 100 125 150 V= V = 3 V RRM T (°C) j I (nA) R Figure 7. ESD response to IEC61000-4-2 (+8 kV contact discharge) Figure 8. ESD response to IEC61000-4-2 (-8 kV contact discharge) C2 50 V/div 20 ns/div C2 20 ns/div 50 V/div |
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