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EMIF06-USD05F3 Datasheet(PDF) 2 Page - STMicroelectronics |
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EMIF06-USD05F3 Datasheet(HTML) 2 Page - STMicroelectronics |
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2 / 8 page ![]() Characteristics EMIF06-USD05F3 2/8 DocID025910 Rev 1 1 Characteristics Figure 2. Electrical characteristics (definitions) Table 1. Absolute maximum ratings (Tamb = 25 °C) Symbol Parameter Value Unit VPP ESD discharge IEC 61000-4-2, level 4 Air discharge card side Contact discharge card side Air discharge IC side Contact discharge IC side 15 8 2 2 kV Tj Maximum junction temperature 125 °C Top Operating temperature range - 30 to + 85 °C Tstg Storage temperature range - 55 to + 150 °C Table 2. Electrical characteristics (values, Tamb = 25 °C) Symbol Parameter Test conditions Min. Typ. Max. Unit VBR Breakdown voltage IR = 1 mA 6 V IRM Leakage current at VRM VRM = 3 V 100 nA Rline Serial line resistor 32 40 48 Ω Cline Total line capacitance VBIAS = 2.4 V 11 14 pF Fc -3dB cut-off frequency Zsource = Zload = 50 Ω 300 MHz S21 Attenuation F = 900 MHz -25 -30 dB Symbol Parameter V = Breakdown voltage V = Stand-off voltage BR RM I = Leakage current at V RM RM = Line capacitance Cline V I VCLVBR VRM IRM IPP |
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