STB7ANM60N datasheet(3/20 Pages) STMICROELECTRONICS

3 / 20 page

DocID023350 Rev 2

3/20

STB7ANM60N, STD7ANM60N

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

Unit

Drain-source voltage

600

Gate-source voltage

± 25

Drain current (continuous) at T

= 25 °C

Drain current (continuous) at T

= 100 °C

(1)

Pulse width limited by safe operating area

Drain current (pulsed)

TOT

Total dissipation at T

= 25 °C

dv/dt

(2)

≤ 5 A, di/dt ≤ 400 A/μs, V

= 80% V

(BR)DSS

, V

DS(Peak)

< V

(BR)DSS

Peak diode recovery voltage slope

V/ns

stg

Storage temperature

- 55 to 150

°C

Max. operating junction temperature

150

°C

Table 3. Thermal data

Symbol

Parameter

Value

Unit

D2PAK

DPAK

thj-case

Thermal resistance junction-case max

2.78

°C/W

thj-pcb

(1)

When mounted on 1 inch² FR-4 board, 2oz Cu

Thermal resistance junction-pcb max

°C/W

Table 4. Thermal data

Symbol

Parameter

Value

Unit

Avalanche current, repetitive or not-repetitive (pulse

width limited by T

max)

Single pulse avalanche energy

(starting T

= 25°C, I

= I

, V

= 50 V)

119

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