STB46N30M5 datasheet(5/17 Pages) STMICROELECTRONICS

5 / 17 page

DocID026126 Rev 2

5/17

STB46N30M5

Electrical characteristics

Table 7. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max

Unit

td(v)

Voltage delay time

VDD = 240 V, ID = 32 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 15)

-66

tr(v)

Voltage rise time

tf(i)

Current fall time

tc(off)

Crossing time

22.5

Table 8. Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain current

ISDM

(1)

Pulse width limited by safe operating area

Source-drain current (pulsed)

212

VSD

(2)

Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Forward on voltage

ISD = 53 A, VGS = 0

1.5

trr

Reverse recovery time

ISD = 48 A, di/dt = 100 A/µs

VDD = 60 V (see Figure 20)

223

Qrr

Reverse recovery charge

2.5

μC

IRRM

Reverse recovery current

trr

Reverse recovery time

ISD = 48 A, di/dt = 100 A/µs

VDD = 60 V, Tj = 150 °C

(see Figure 20)

280

Qrr

Reverse recovery charge

3.9

μC

IRRM

Reverse recovery current

STB46N30M5 Datasheet(PDF) 5 Page - STMicroelectronics

STB46N30M5 Datasheet(HTML) 5 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17

Datasheet Download

Link URL