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STF22NM60ND Datasheet(PDF) 5 Page - STMicroelectronics

Part # STF22NM60ND
Description  Automotive-grade N-channel 600 V, 0.17 Ω typ., 17 A FDmesh™ II Power MOSFET in a TO-220FP package
PDF  13 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STF22NM60ND Datasheet(HTML) 5 Page - STMicroelectronics

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5/13
STF22NM60ND
Electrical characteristics
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain current
17
A
ISDM
(1)
1.
Pulse width limited by safe operating area
Source-drain current (pulsed)
68
A
VSD
(2)
2.
Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
Forward on voltage
ISD = 17 A, VGS = 0
1.6
V
trr
Reverse recovery time
ISD = 17 A, VDD = 60 V
di/dt=100 A/µs
(see Figure 16)
150
ns
Qrr
Reverse recovery charge
0.90
µC
IRRM
Reverse recovery current
13
A
trr
Reverse recovery time
ISD = 17 A,VDD = 60 V
di/dt=100 A/µs,
TJ = 150 °C
(see Figure 16)
240
ns
Qrr
Reverse recovery charge
2
µC
IRRM
Reverse recovery current
16
A



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